Daļas numurs SQ3585EV-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ3585EV-T1_GE3 Apraksts MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Dual Fall Time 8 ns, 14 ns Forward Transconductance - Min 10 S, 3 S Id - Continuous Drain Current 3.57 A, 2.5 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.67 W Product Type MOSFET Qg - Gate Charge 2.5 nC, 3.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 49 mOhms, 140 mOhms Rise Time 15 ns, 16 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel, P-Channel Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 22 ns, 29 ns Typical Turn-On Delay Time 9 ns, 7 ns Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 600 mV, 1.5 V