Daļas numurs IGP40N65H5XKSA1 Kategorijas IGBT Transistors RoHS Datu lapas IGP40N65H5XKSA1 Apraksts IGBT Transistors IGBT PRODUCTS
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 74 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220-3 Packaging Tube Part # Aliases Pd - Power Dissipation 250 W Product Type IGBT Transistors Series TRENCHSTOP 5 H5 Technology SI Tradename TRENCHSTOP Unit Weight