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IGP30N60H3

IGP30N60H3
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
60 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Operating Temperature Range
- 40 C to + 175 C
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
187 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
goods very well received very good quality
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Vairāk

Jums var patikt

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Saistītie atslēgvārdi IGP3

  • IGP30N60H3 Integrēta
  • IGP30N60H3 RoHS
  • IGP30N60H3 PDF datu lapa
  • IGP30N60H3 Datu lapas
  • IGP30N60H3 Daļa. \ T
  • IGP30N60H3 Pirkt
  • IGP30N60H3 Izplatītājs
  • IGP30N60H3 PDF
  • IGP30N60H3 Komponents
  • IGP30N60H3 IC
  • IGP30N60H3 Lejupielādēt PDF failu
  • IGP30N60H3 Lejupielādēt datu lapu
  • IGP30N60H3 Piegāde
  • IGP30N60H3 Piegādātājs
  • IGP30N60H3 Cena
  • IGP30N60H3 Datu lapas
  • IGP30N60H3 Attēls
  • IGP30N60H3 Bilde
  • IGP30N60H3 Inventarizācija
  • IGP30N60H3 Krājumi
  • IGP30N60H3 Oriģināls
  • IGP30N60H3 Lētākais
  • IGP30N60H3 Teicami
  • IGP30N60H3 Bez svina
  • IGP30N60H3 Specifikācija
  • IGP30N60H3 Karstie piedāvājumi
  • IGP30N60H3 Break cena
  • IGP30N60H3 Tehniskie dati

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