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IGOT60R070D1AUMA1

IGOT60R070D1AUMA1
Attēli ir tikai norādei
Daļas numurs
IGOT60R070D1AUMA1
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 600V CoolGaN Power Transistor
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Fall Time
13 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PG-DSO-20
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
125 W
Product
CoolGaN
Product Type
MOSFET
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
9 ns
Technology
GaN
Tradename
CoolGaN
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
15 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
0.9 V

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Works. Recommend
Long Service and Russia!
The timer is running. 10 PCS. Packed properly.
Vairāk

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IGOT60R070D1AUMA1
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