IGP20N60H3

Attēli ir tikai norādei

Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
170 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Jaunākās atsauksmes

My package arrived wet, not know where occurs this fact, but working all right

fast delivery

Shipping a little 1 weeks, normal packing, the procedure is complete.

The goods are OK, thank you dealers.

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

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