Daļas numurs SQ1922AEEH-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ1922AEEH-T1_GE3 Apraksts MOSFET Dual Nch 20V Vds SOT-363
Kategorijas MOSFET Channel Mode Enhancement Configuration Dual Fall Time 6 ns Id - Continuous Drain Current 0.85 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SOT-363-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.5 W Product Type MOSFET Qg - Gate Charge 1.2 nC Rds On - Drain-Source Resistance 300 mOhms Rise Time 9.6 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 2 N-Channel Typical Turn-Off Delay Time 8 ns Typical Turn-On Delay Time 10 ns Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V