Daļas numurs SQA410EJ-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQA410EJ-T1_GE3 Apraksts MOSFET 20V 7.8A 13.6W AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 31 S Id - Continuous Drain Current 7.8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SC-70-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 13.6 W Product Type MOSFET Qg - Gate Charge 8 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 23 mOhms Rise Time 8 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 8 ns Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 8 V Vgs th - Gate-Source Threshold Voltage 450 mV