Daļas numurs FF200R12KS4 Kategorijas IGBT Modules RoHS Datu lapas FF200R12KS4 Apraksts IGBT Modules 1200V 200A DUAL
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 3.2 V Configuration Dual Continuous Collector Current at 25 C 275 A Gate-Emitter Leakage Current 400 nA Height 30.5 mm Length 106.4 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case 62 mm Packaging Tray Part # Aliases Pd - Power Dissipation 1.4 kW Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Width 61.4 mm