Daļas numurs FD150R12RT4 Kategorijas IGBT Modules RoHS Datu lapas FD150R12RT4 Apraksts IGBT Modules IGBT 1200V 150A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2.15 V Continuous Collector Current at 25 C 150 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Packaging Tray Part # Aliases Pd - Power Dissipation 790 W Product Type IGBT Modules Unit Weight