FF150R12KE3G

Daļas numurs
FF150R12KE3G
Kategorijas
IGBT Modules
RoHS
Datu lapas
Apraksts
IGBT Modules 1200V 150A DUAL

Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Height
30.5 mm
Length
106.4 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
62 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
780 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight
Width
61.4 mm

Jaunākās atsauksmes

Teşekkürler

Yes, they are all here. :)

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Thank You all fine, packed very well

Decent quality, not минвелл certainly, but enough decent

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