Daļas numurs SQ4401EY-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ4401EY-T1_GE3 Apraksts MOSFET 40V 17.3A 7.14W AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 44 ns Forward Transconductance - Min 30 s Height 1.75 mm Id - Continuous Drain Current 17.3 A Length 4.9 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 7.14 W Product Type MOSFET Qg - Gate Charge 115 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 11 mOhms Rise Time 76 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 67 ns Typical Turn-On Delay Time 58 ns Unit Weight Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 3.9 mm