Daļas numurs IGB01N120H2 Kategorijas IGBT Transistors RoHS Datu lapas IGB01N120H2 Apraksts IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Configuration Single Continuous Collector Current Ic Max 3.2 A Height 4.4 mm Length 10.25 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Part # Aliases Product Type IGBT Transistors Series IGB01N120 Technology SI Unit Weight Width 9.9 mm