- Daļas numurs
- J112
- Kategorijas
- JFET
- RoHS
- Datu lapas
- Apraksts
- JFET N-Ch JFET -35V -5Vds 50mA 360mW 3.27mW
J112
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- JFET
- Configuration
- Single
- Drain-Source Current at Vgs=0
- 5 mA
- Gate-Source Cutoff Voltage
- - 5 V
- Mounting Style
- Through Hole
- Package / Case
- TO-92-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 360 mW
- Rds On - Drain-Source Resistance
- 50 Ohms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- JFET
- Vgs - Gate-Source Breakdown Voltage
- - 35 V
Porduct kategorija
Circuit Protection
157,625 Produkti
Connectors
2,137,436 Produkti
Electromechanical
285,583 Produkti
Embedded Solutions
103,645 Produkti
Enclosures
21,131 Produkti
Engineering Development Tools
46,355 Produkti
Industrial Automation
55,700 Produkti
LED Lighting
67,469 Produkti
Optoelectronics
76,118 Produkti
Passive Components
2,029,037 Produkti
Power
278,174 Produkti
Semiconductors
575,056 Produkti
Sensors
61,386 Produkti
Test & Measurement
20,391 Produkti
Jaunākās atsauksmes
My package arrived wet, not know where occurs this fact, but working all right
Eddy Hustinx
Received, Fast shipping, not checked yet
Roy Boustany
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Quickly came to CET, all in one package. Look at the rules
Earl Sault
J112 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi J112
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- J112 PDF datu lapa
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- J112 Daļa. \ T
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- J112 Lejupielādēt PDF failu
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- J112 Piegāde
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- J112 Teicami
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- J112 Karstie piedāvājumi
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- J112 Tehniskie dati
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