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UF3C065030T3S

UF3C065030T3S
Attēli ir tikai norādei
Daļas numurs
UF3C065030T3S
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 650V/30mOhm SiC FAST CASCODE G3 TO-220-3L REDUCED Rth
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
17 ns
Id - Continuous Drain Current
85 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
441 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
35 mOhms
Rise Time
28 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
61 ns
Typical Turn-On Delay Time
43 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
5 V

Porduct kategorija

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Saistītie atslēgvārdi UF3C

  • UF3C065030T3S Integrēta
  • UF3C065030T3S RoHS
  • UF3C065030T3S PDF datu lapa
  • UF3C065030T3S Datu lapas
  • UF3C065030T3S Daļa. \ T
  • UF3C065030T3S Pirkt
  • UF3C065030T3S Izplatītājs
  • UF3C065030T3S PDF
  • UF3C065030T3S Komponents
  • UF3C065030T3S IC
  • UF3C065030T3S Lejupielādēt PDF failu
  • UF3C065030T3S Lejupielādēt datu lapu
  • UF3C065030T3S Piegāde
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  • UF3C065030T3S Cena
  • UF3C065030T3S Datu lapas
  • UF3C065030T3S Attēls
  • UF3C065030T3S Bilde
  • UF3C065030T3S Inventarizācija
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  • UF3C065030T3S Oriģināls
  • UF3C065030T3S Lētākais
  • UF3C065030T3S Teicami
  • UF3C065030T3S Bez svina
  • UF3C065030T3S Specifikācija
  • UF3C065030T3S Karstie piedāvājumi
  • UF3C065030T3S Break cena
  • UF3C065030T3S Tehniskie dati

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