Daļas numurs SQ2309ES-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ2309ES-T1_GE3 Apraksts MOSFET 60V -1.7A 2W AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 9 ns Forward Transconductance - Min 1.8 S Id - Continuous Drain Current 1.7 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-236-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 2 W Product Type MOSFET Qg - Gate Charge 8.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 268 mOhms Rise Time 9 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 12 ns Typical Turn-On Delay Time 5 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V