BS170-D26Z

Attēli ir tikai norādei
Daļas numurs
BS170-D26Z
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET N-Ch Enhancement Mode Field Effect

Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Forward Transconductance - Min
0.32 S
Height
5.33 mm
Id - Continuous Drain Current
500 mA
Length
5.2 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
830 mW
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
1.2 Ohms
Series
BS170
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

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