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RU1C002ZPTCL

RU1C002ZPTCL
Attēli ir tikai norādei
Daļas numurs
RU1C002ZPTCL
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 4V Drive Pch MOSFET Drive Pch
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
17 ns
Height
0.9 mm
Id - Continuous Drain Current
200 mA
Length
2 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-323FL-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
150 mW
Product
MOSFET
Product Type
MOSFET
Qg - Gate Charge
1.4 nC
Rds On - Drain-Source Resistance
1.2 Ohms
Rise Time
4 ns
Series
RU1C002ZP
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel MOSFET
Type
Power MOSFET
Typical Turn-Off Delay Time
17 ns
Typical Turn-On Delay Time
6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
300 mV
Width
1.25 mm

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
My package arrived wet, not know where occurs this fact, but working all right
all exactly and work. радиолюбителя useful set to, thank you)
packed pretty good, all is ok,-seller.
High Quality driver, works excellent. It came to Moscow for 7 days.
fast delivery
Vairāk

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