Daļas numurs SQ3410EV-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ3410EV-T1_GE3 Apraksts MOSFET 30V 8A 5W AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 7 ns Forward Transconductance - Min 25 s Id - Continuous Drain Current 8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging MouseReel Packaging Reel Packaging Cut Tape Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 21 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 14 mOhms Rise Time 12 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 9 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V