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SQ9945BEY-T1_GE3

SQ9945BEY-T1_GE3
Attēli ir tikai norādei
Daļas numurs
SQ9945BEY-T1_GE3
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 60V 5.4A 4W AEC-Q101 Qualified
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
1.7 ns, 1.7 ns
Forward Transconductance - Min
12 S, 12 S
Height
1.75 mm
Id - Continuous Drain Current
5.4 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
4 W
Product Type
MOSFET
Qg - Gate Charge
12 nC, 12 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
45 mOhms, 45 mOhms
Rise Time
2.8 ns, 2.8 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
17 ns, 17 ns
Typical Turn-On Delay Time
6 ns, 6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
3.9 mm

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Thanks for your feedback!
everything as it is written in the description of the same deductible prodovtsu deserved
Teşekkürler
Takes 8 days to Japan. Good!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Vairāk

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Saistītie atslēgvārdi SQ99

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  • SQ9945BEY-T1_GE3 PDF datu lapa
  • SQ9945BEY-T1_GE3 Datu lapas
  • SQ9945BEY-T1_GE3 Daļa. \ T
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  • SQ9945BEY-T1_GE3 PDF
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  • SQ9945BEY-T1_GE3 IC
  • SQ9945BEY-T1_GE3 Lejupielādēt PDF failu
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  • SQ9945BEY-T1_GE3 Specifikācija
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  • SQ9945BEY-T1_GE3 Tehniskie dati

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