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LN100LA-G

LN100LA-G
Attēli ir tikai norādei
Daļas numurs
LN100LA-G
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 1200V Cascoded N-Channel MOSFET
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Specifikācijas

Kategorijas
MOSFET
Configuration
Dual
Id - Continuous Drain Current
3 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
LGA-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
350 mW
Product Type
MOSFET
Rds On - Drain-Source Resistance
3 kOhms
Series
LN100
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Vgs th - Gate-Source Threshold Voltage
1.6 V

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Works. Recommend
Long Service and Russia!
Everything is fine!
Great product. Arrived ahead of time. Thank you
Good material. Great seller, efficient and insurance. Ok
Vairāk

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LN100LA-G Jaunumi

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Saistītie atslēgvārdi LN10

  • LN100LA-G Integrēta
  • LN100LA-G RoHS
  • LN100LA-G PDF datu lapa
  • LN100LA-G Datu lapas
  • LN100LA-G Daļa. \ T
  • LN100LA-G Pirkt
  • LN100LA-G Izplatītājs
  • LN100LA-G PDF
  • LN100LA-G Komponents
  • LN100LA-G IC
  • LN100LA-G Lejupielādēt PDF failu
  • LN100LA-G Lejupielādēt datu lapu
  • LN100LA-G Piegāde
  • LN100LA-G Piegādātājs
  • LN100LA-G Cena
  • LN100LA-G Datu lapas
  • LN100LA-G Attēls
  • LN100LA-G Bilde
  • LN100LA-G Inventarizācija
  • LN100LA-G Krājumi
  • LN100LA-G Oriģināls
  • LN100LA-G Lētākais
  • LN100LA-G Teicami
  • LN100LA-G Bez svina
  • LN100LA-G Specifikācija
  • LN100LA-G Karstie piedāvājumi
  • LN100LA-G Break cena
  • LN100LA-G Tehniskie dati

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