Daļas numurs XP202A0003PR-G Kategorijas MOSFET RoHS Datu lapas XP202A0003PR-G Apraksts MOSFET Power MOSFET, -30V, 5A, P-Type, SOT-89
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 6 ns Forward Transconductance - Min 2.8 S Id - Continuous Drain Current 5 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-89-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.5 W Product Type MOSFET Qg - Gate Charge 10 nC Rds On - Drain-Source Resistance 59 mOhms Rise Time 8 ns Series XP202 Technology SI Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 31 ns Typical Turn-On Delay Time 7 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage - 2.6 V