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XP236N2001TR-G

XP236N2001TR-G
Attēli ir tikai norādei
Daļas numurs
XP236N2001TR-G
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET General-purpose N-channel MOSFET , 30V / 2A / SOT-23
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
230 ns
Id - Continuous Drain Current
2 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
0.4 W
Product Type
MOSFET
Qg - Gate Charge
4.1 nC
Rds On - Drain-Source Resistance
110 mOhms
Rise Time
90 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
350 ns
Typical Turn-On Delay Time
30 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
0.4 V

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
and whole all right. the features no more функционалу check.
Vairāk

Jums var patikt

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Saistītie atslēgvārdi XP23

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  • XP236N2001TR-G RoHS
  • XP236N2001TR-G PDF datu lapa
  • XP236N2001TR-G Datu lapas
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  • XP236N2001TR-G Izplatītājs
  • XP236N2001TR-G PDF
  • XP236N2001TR-G Komponents
  • XP236N2001TR-G IC
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  • XP236N2001TR-G Tehniskie dati

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