Daļas numurs MJ2955G Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJ2955G Apraksts Bipolar Transistors - BJT 15A 60V 115W PNP
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 1.1 V Configuration Single Continuous Collector Current 15 A DC Collector/Base Gain hfe Min 20 Emitter- Base Voltage VEBO 7 V Gain Bandwidth Product fT 2.5 MHz Height 8.51 mm Length 39.37 mm Maximum DC Collector Current 15 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-204-2 Packaging Tray Pd - Power Dissipation 115 W Product Type BJTs - Bipolar Transistors Series MJ2955 Technology SI Transistor Polarity PNP Unit Weight Width 26.67 mm