Daļas numurs MJ2955 Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJ2955 Apraksts Bipolar Transistors - BJT 100Vcbo 70Vcer 60Vceo 15A 115W
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 3 V Configuration Single Continuous Collector Current 15 A DC Collector/Base Gain hfe Min 5 at 10 A, 4 V Emitter- Base Voltage VEBO 7 V Gain Bandwidth Product fT 2.5 MHz Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-3-2 Packaging Tube Part # Aliases Pd - Power Dissipation 115 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP Unit Weight