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PZT2222A,115

PZT2222A,115
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
40 V
Configuration
Single
Continuous Collector Current
600 mA
DC Collector/Base Gain hfe Min
35
DC Current Gain hFE Max
35 at 100 uA, 10 V
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
300 MHz
Height
1.7 mm
Length
6.7 mm
Maximum DC Collector Current
800 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-223-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1.15 W
Product Type
BJTs - Bipolar Transistors
Qualification
AEC-Q101
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
3.7 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Takes 8 days to Japan. Good!
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
I received the product right, thank you very much 2018/12/03 ★★★★★
No problem, with no contact, selectively checked a few pieces, such as running
Vairāk

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