Daļas numurs PZT2222A-TP Kategorijas Bipolar Transistors - BJT RoHS Datu lapas PZT2222A-TP Apraksts Bipolar Transistors - BJT NPN Plastic-Encapsulate Transistors,SOT-223
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage 0.3 V, 1 V Configuration Single DC Collector/Base Gain hfe Min 100 DC Current Gain hFE Max 300 Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 300 MHz Maximum DC Collector Current 0.6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-223-4 Packaging Reel Pd - Power Dissipation 1 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN