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MJB44H11T4G

MJB44H11T4G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
5 V
Collector- Emitter Voltage VCEO Max
80 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
60
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
50 MHz
Height
4.83 mm
Length
10.29 mm
Maximum DC Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
50 W
Product Type
BJTs - Bipolar Transistors
Series
MJB44H11
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
9.65 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Great product. Arrived ahead of time. Thank you
Vairāk

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