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MJD3055T4G

MJD3055T4G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
70 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
1.1 V
Configuration
Single
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
20
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
2 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
20 W
Product Type
BJTs - Bipolar Transistors
Series
MJD3055
Technology
SI
Transistor Polarity
NPN
Width
6.22 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
I received the product right, thank you very much 2018/12/03 ★★★★★
and whole all right. the features no more функционалу check.
Product Description. highly recommend.
Vairāk

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