MJD31C-13

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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25
DC Current Gain hFE Max
40 at 3 A, 4 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
3 MHz
Height
2.4 mm
Length
6.8 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
DPAK-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1560 mW
Product Type
BJTs - Bipolar Transistors
Series
MJD31C
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
6.2 mm

Jaunākās atsauksmes

goods very well received very good quality

Quickly came to CET, all in one package. Look at the rules

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

High Quality driver, works excellent. It came to Moscow for 7 days.

Everything is fine!

Saistītie atslēgvārdi MJD3

  • MJD31C-13 Integrēta
  • MJD31C-13 RoHS
  • MJD31C-13 PDF datu lapa
  • MJD31C-13 Datu lapas
  • MJD31C-13 Daļa. \ T
  • MJD31C-13 Pirkt
  • MJD31C-13 Izplatītājs
  • MJD31C-13 PDF
  • MJD31C-13 Komponents
  • MJD31C-13 IC
  • MJD31C-13 Lejupielādēt PDF failu
  • MJD31C-13 Lejupielādēt datu lapu
  • MJD31C-13 Piegāde
  • MJD31C-13 Piegādātājs
  • MJD31C-13 Cena
  • MJD31C-13 Datu lapas
  • MJD31C-13 Attēls
  • MJD31C-13 Bilde
  • MJD31C-13 Inventarizācija
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  • MJD31C-13 Lētākais
  • MJD31C-13 Teicami
  • MJD31C-13 Bez svina
  • MJD31C-13 Specifikācija
  • MJD31C-13 Karstie piedāvājumi
  • MJD31C-13 Break cena
  • MJD31C-13 Tehniskie dati