Daļas numurs MJD41CRLG Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJD41CRLG Apraksts Bipolar Transistors - BJT 6A 100V 20W NPN
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 100 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current 6 A DC Collector/Base Gain hfe Min 30 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 3 MHz Height 2.38 mm Length 6.73 mm Maximum DC Collector Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case DPAK-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 20 W Product Type BJTs - Bipolar Transistors Series MJD41C Technology SI Transistor Polarity NPN Unit Weight Width 6.22 mm