- Daļas numurs
- MJD42C1G
- Kategorijas
- Bipolar Transistors - BJT
- RoHS
- Datu lapas
- Apraksts
- Bipolar Transistors - BJT 6A 100V 20W PNP
MJD42C1G
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 100 V
- Collector- Emitter Voltage VCEO Max
- 100 V
- Configuration
- Single
- DC Collector/Base Gain hfe Min
- 30 at 300 mA, 4 V, 15 at 3 A, 4 V
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 3 MHz
- Height
- 6.35 mm
- Length
- 6.73 mm
- Maximum DC Collector Current
- 6 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Package / Case
- IPAK-3
- Packaging
- Tube
- Pd - Power Dissipation
- 1.75 W
- Product Type
- BJTs - Bipolar Transistors
- Series
- MJD42C
- Technology
- SI
- Transistor Polarity
- PNP
- Unit Weight
- Width
- 2.38 mm
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Jaunākās atsauksmes
Everything is excellent! recommend this seller!
Stoyan Chaykov
Works. Find the price of this product is very good
Maxim Krasnov
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Great product. Arrived ahead of time. Thank you
Alexey Petrov
MJD42C1G Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi MJD4
- MJD42C1G Integrēta
- MJD42C1G RoHS
- MJD42C1G PDF datu lapa
- MJD42C1G Datu lapas
- MJD42C1G Daļa. \ T
- MJD42C1G Pirkt
- MJD42C1G Izplatītājs
- MJD42C1G PDF
- MJD42C1G Komponents
- MJD42C1G IC
- MJD42C1G Lejupielādēt PDF failu
- MJD42C1G Lejupielādēt datu lapu
- MJD42C1G Piegāde
- MJD42C1G Piegādātājs
- MJD42C1G Cena
- MJD42C1G Datu lapas
- MJD42C1G Attēls
- MJD42C1G Bilde
- MJD42C1G Inventarizācija
- MJD42C1G Krājumi
- MJD42C1G Oriģināls
- MJD42C1G Lētākais
- MJD42C1G Teicami
- MJD42C1G Bez svina
- MJD42C1G Specifikācija
- MJD42C1G Karstie piedāvājumi
- MJD42C1G Break cena
- MJD42C1G Tehniskie dati
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