- Daļas numurs
- IKA08N65F5
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IKA08N65F5
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 10.8 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3 FP
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 31.2 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 F5
- Technology
- SI
- Tradename
- TRENCHSTOP
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Jaunākās atsauksmes
it is safe and sound all, thank you seller!
Arturo Madril
Everything is excellent! recommend this seller!
Stoyan Chaykov
Works. Find the price of this product is very good
Maxim Krasnov
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Jums var patikt
Cilvēki skatās IKA08N65F5, tad nopirka
IKA08N65F5 Jaunumi
03/14/2023
03/13/2023
03/13/2023
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