Daļas numurs IKA08N65ET6XKSA1 Kategorijas IGBT Transistors RoHS Datu lapas IKA08N65ET6XKSA1 Apraksts IGBT Transistors Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current at 25 C 11 A Continuous Collector Current Ic Max 11 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220FP-3 Packaging Tube Part # Aliases Pd - Power Dissipation 33 W Product Type IGBT Transistors Series IGBT6 Technology SI Tradename TRENCHSTOP