FF150R12KT3G

Attēli ir tikai norādei
Daļas numurs
FF150R12KT3G
Kategorijas
IGBT Modules
RoHS
Datu lapas
Apraksts
IGBT Modules N-CH 1.2KV 225A

Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Height
30.9 mm
Length
106.4 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
62 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
780 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight
Width
61.4 mm

Jaunākās atsauksmes

Teşekkürler

Received, Fast shipping, not checked yet

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Takes 8 days to Japan. Good!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

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