Daļas numurs FF150R12KT3G Kategorijas IGBT Modules RoHS Datu lapas FF150R12KT3G Apraksts IGBT Modules N-CH 1.2KV 225A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2.15 V Configuration Dual Continuous Collector Current at 25 C 225 A Gate-Emitter Leakage Current 400 nA Height 30.9 mm Length 106.4 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case 62 mm Packaging Tray Part # Aliases Pd - Power Dissipation 780 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight Width 61.4 mm