FF100R12KS4

Daļas numurs
FF100R12KS4
Kategorijas
IGBT Modules
RoHS
Datu lapas
Apraksts
IGBT Modules 1200V 100A DUAL

Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.2 V
Configuration
Dual
Continuous Collector Current at 25 C
150 A
Gate-Emitter Leakage Current
400 nA
Height
30.5 mm
Length
106.4 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
62 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
780 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight
Width
61.4 mm

Jaunākās atsauksmes

Отличный продавец . Рекомендую.+++

Hello! Order received, very happy. Thank you very much!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Fast shippng. Good quality. I recomend this seller.

Product as shown in the description, excellent seller, I recommend this seller.

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