Daļas numurs IKP39N65ES5XKSA1 Kategorijas IGBT Transistors RoHS Datu lapas IKP39N65ES5XKSA1 Apraksts IGBT Transistors
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.45 V Configuration Single Continuous Collector Current at 25 C 62 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220-2 Packaging Tube Part # Aliases Pd - Power Dissipation 188 W Product Type IGBT Transistors Series IKP39 Technology SI Tradename TRENCHSTOP 5 S5