- Daļas numurs
- IKP30N65H5
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS TrenchStop 5
IKP30N65H5
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 55 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 15.95 mm
- Length
- 10.36 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Operating Temperature Range
- - 40 C to + 175 C
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 188 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 H5
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
- Width
- 4.57 mm
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Jaunākās atsauksmes
Everything is excellent! recommend this seller!
Stoyan Chaykov
Works. Find the price of this product is very good
Maxim Krasnov
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Great product. Arrived ahead of time. Thank you
Alexey Petrov
Jums var patikt
Cilvēki skatās IKP30N65H5, tad nopirka
IKP30N65H5 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKP3
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- IKP30N65H5 PDF datu lapa
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- IKP30N65H5 Lejupielādēt PDF failu
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- IKP30N65H5 Attēls
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- IKP30N65H5 Karstie piedāvājumi
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- IKP30N65H5 Tehniskie dati
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