FF150R12ME3G

Daļas numurs
FF150R12ME3G
Kategorijas
IGBT Modules
RoHS
Datu lapas
Apraksts
IGBT Modules N-CH 1.2KV 200A

Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Dual
Continuous Collector Current at 25 C
200 A
Gate-Emitter Leakage Current
400 nA
Height
17 mm
Length
152 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
EconoDUAL-3
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
695 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight
Width
62 mm

Jaunākās atsauksmes

Teşekkürler

Quickly came to CET, all in one package. Look at the rules

Yes, they are all here. :)

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Saistītie atslēgvārdi FF15

  • FF150R12ME3G Integrēta
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