Daļas numurs FF150R12ME3G Kategorijas IGBT Modules RoHS Datu lapas FF150R12ME3G Apraksts IGBT Modules N-CH 1.2KV 200A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.7 V Configuration Dual Continuous Collector Current at 25 C 200 A Gate-Emitter Leakage Current 400 nA Height 17 mm Length 152 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case EconoDUAL-3 Packaging Tray Part # Aliases Pd - Power Dissipation 695 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight Width 62 mm