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IGB20N60H3

IGB20N60H3
Attēli ir tikai norādei
Daļas numurs
IGB20N60H3
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors 600v Hi-Speed SW IGBT
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
170 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
Fast shippng. Good quality. I recomend this seller.
Great product. Arrived ahead of time. Thank you
Vairāk

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Saistītie atslēgvārdi IGB2

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