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IGB20N65S5ATMA1

IGB20N65S5ATMA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.35 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Continuous Collector Current Ic Max
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
125 W
Product Type
IGBT Transistors
Technology
SI

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Quick delivery. Secure packing. Excellent product. Thank you
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Looks good
Vairāk

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Saistītie atslēgvārdi IGB2

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  • IGB20N65S5ATMA1 Lejupielādēt datu lapu
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