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IKB10N60TATMA1

IKB10N60TATMA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
24 A
Gate-Emitter Leakage Current
100 nA
Height
4.57 mm
Length
10.31 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
110 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Width
9.45 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
Long Service and Russia!
Great product. Arrived ahead of time. Thank you
Good material. Great seller, efficient and insurance. Ok
Vairāk

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IKB10N60TATMA1 Jaunumi

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