- Daļas numurs
- IKB10N60T
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors LOW LOSS DuoPack 600V 10A
IKB10N60T
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 24 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 4.57 mm
- Length
- 10.31 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 110 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP IGBT
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
- Width
- 9.45 mm
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Jaunākās atsauksmes
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
Works. Recommend
Rajiv
Jums var patikt
Cilvēki skatās IKB10N60T, tad nopirka
IKB10N60T Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKB1
- IKB10N60T Integrēta
- IKB10N60T RoHS
- IKB10N60T PDF datu lapa
- IKB10N60T Datu lapas
- IKB10N60T Daļa. \ T
- IKB10N60T Pirkt
- IKB10N60T Izplatītājs
- IKB10N60T PDF
- IKB10N60T Komponents
- IKB10N60T IC
- IKB10N60T Lejupielādēt PDF failu
- IKB10N60T Lejupielādēt datu lapu
- IKB10N60T Piegāde
- IKB10N60T Piegādātājs
- IKB10N60T Cena
- IKB10N60T Datu lapas
- IKB10N60T Attēls
- IKB10N60T Bilde
- IKB10N60T Inventarizācija
- IKB10N60T Krājumi
- IKB10N60T Oriģināls
- IKB10N60T Lētākais
- IKB10N60T Teicami
- IKB10N60T Bez svina
- IKB10N60T Specifikācija
- IKB10N60T Karstie piedāvājumi
- IKB10N60T Break cena
- IKB10N60T Tehniskie dati
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