Daļas numurs IKB20N60H3 Kategorijas IGBT Transistors RoHS Datu lapas IKB20N60H3 Apraksts IGBT Transistors 600v Hi-Speed SW IGBT
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.95 V Configuration Single Continuous Collector Current at 25 C 40 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 170 W Product Type IGBT Transistors Series HighSpeed 3 Technology SI Tradename TRENCHSTOP Unit Weight