IKB20N60H3

Attēli ir tikai norādei
Daļas numurs
IKB20N60H3
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors 600v Hi-Speed SW IGBT

Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
170 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Jaunākās atsauksmes

Works. Find the price of this product is very good

High Quality driver, works excellent. It came to Moscow for 7 days.

Goods came in two weeks. Well packed. Track number tracked

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Received very good

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