- Daļas numurs
- IKP08N65H5
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IKP08N65H5
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 18 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 70 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 H5
- Technology
- SI
- Tradename
- TRENCHSTOP
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Jaunākās atsauksmes
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Works. Recommend
Rajiv
receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.
Khalid Ali
All very good. AND packed as you have everything in good condition.
Andy Nicole
Excellent transaction five star service thank you, we will do business again.
Steve Lindquist
Jums var patikt
Cilvēki skatās IKP08N65H5, tad nopirka
IKP08N65H5 Jaunumi
03/14/2023
03/13/2023
03/13/2023
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