- Daļas numurs
- IGB30N60H3
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors 600v Hi-Speed SW IGBT
IGB30N60H3
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.95 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 60 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 187 W
- Product Type
- IGBT Transistors
- Series
- HighSpeed 3
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
Porduct kategorija
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Jaunākās atsauksmes
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Everything is excellent! recommend this seller!
Stoyan Chaykov
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
fast delivery
Mike Ibarra
Jums var patikt
Cilvēki skatās IGB30N60H3, tad nopirka
IGB30N60H3 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IGB3
- IGB30N60H3 Integrēta
- IGB30N60H3 RoHS
- IGB30N60H3 PDF datu lapa
- IGB30N60H3 Datu lapas
- IGB30N60H3 Daļa. \ T
- IGB30N60H3 Pirkt
- IGB30N60H3 Izplatītājs
- IGB30N60H3 PDF
- IGB30N60H3 Komponents
- IGB30N60H3 IC
- IGB30N60H3 Lejupielādēt PDF failu
- IGB30N60H3 Lejupielādēt datu lapu
- IGB30N60H3 Piegāde
- IGB30N60H3 Piegādātājs
- IGB30N60H3 Cena
- IGB30N60H3 Datu lapas
- IGB30N60H3 Attēls
- IGB30N60H3 Bilde
- IGB30N60H3 Inventarizācija
- IGB30N60H3 Krājumi
- IGB30N60H3 Oriģināls
- IGB30N60H3 Lētākais
- IGB30N60H3 Teicami
- IGB30N60H3 Bez svina
- IGB30N60H3 Specifikācija
- IGB30N60H3 Karstie piedāvājumi
- IGB30N60H3 Break cena
- IGB30N60H3 Tehniskie dati
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