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IGB30N60T

IGB30N60T
Attēli ir tikai norādei
Daļas numurs
IGB30N60T
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors LOW LOSS IGBT TECH 600V 30A
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
60 A
Gate-Emitter Leakage Current
100 nA
Height
4.4 mm
Length
10 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
187 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight
Width
9.25 mm

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
it is safe and sound all, thank you seller!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Vairāk

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Saistītie atslēgvārdi IGB3

  • IGB30N60T Integrēta
  • IGB30N60T RoHS
  • IGB30N60T PDF datu lapa
  • IGB30N60T Datu lapas
  • IGB30N60T Daļa. \ T
  • IGB30N60T Pirkt
  • IGB30N60T Izplatītājs
  • IGB30N60T PDF
  • IGB30N60T Komponents
  • IGB30N60T IC
  • IGB30N60T Lejupielādēt PDF failu
  • IGB30N60T Lejupielādēt datu lapu
  • IGB30N60T Piegāde
  • IGB30N60T Piegādātājs
  • IGB30N60T Cena
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  • IGB30N60T Specifikācija
  • IGB30N60T Karstie piedāvājumi
  • IGB30N60T Break cena
  • IGB30N60T Tehniskie dati

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