Daļas numurs SQ4005EY-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ4005EY-T1_GE3 Apraksts MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 30 ns Forward Transconductance - Min 34 S Height 1.75 mm Id - Continuous Drain Current 15 A Length 4.9 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 6 W Product Type MOSFET Qg - Gate Charge 38 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 13 mOhms Rise Time 33 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 73 ns Typical Turn-On Delay Time 19 ns Unit Weight Vds - Drain-Source Breakdown Voltage 12 V Vgs - Gate-Source Voltage 8 V Vgs th - Gate-Source Threshold Voltage 1 V Width 3.9 mm