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SQ4064EY-T1_GE3

SQ4064EY-T1_GE3
Attēli ir tikai norādei
Daļas numurs
SQ4064EY-T1_GE3
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Forward Transconductance - Min
85 S
Height
1.75 mm
Id - Continuous Drain Current
12 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
6.8 W
Product Type
MOSFET
Qg - Gate Charge
43 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
16.5 mOhms
Rise Time
9.5 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
33 ns
Typical Turn-On Delay Time
16 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
3.9 mm

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Thanks for your feedback!
everything as it is written in the description of the same deductible prodovtsu deserved
Teşekkürler
Takes 8 days to Japan. Good!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Vairāk

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Saistītie atslēgvārdi SQ40

  • SQ4064EY-T1_GE3 Integrēta
  • SQ4064EY-T1_GE3 RoHS
  • SQ4064EY-T1_GE3 PDF datu lapa
  • SQ4064EY-T1_GE3 Datu lapas
  • SQ4064EY-T1_GE3 Daļa. \ T
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  • SQ4064EY-T1_GE3 PDF
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  • SQ4064EY-T1_GE3 IC
  • SQ4064EY-T1_GE3 Lejupielādēt PDF failu
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  • SQ4064EY-T1_GE3 Datu lapas
  • SQ4064EY-T1_GE3 Attēls
  • SQ4064EY-T1_GE3 Bilde
  • SQ4064EY-T1_GE3 Inventarizācija
  • SQ4064EY-T1_GE3 Krājumi
  • SQ4064EY-T1_GE3 Oriģināls
  • SQ4064EY-T1_GE3 Lētākais
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  • SQ4064EY-T1_GE3 Bez svina
  • SQ4064EY-T1_GE3 Specifikācija
  • SQ4064EY-T1_GE3 Karstie piedāvājumi
  • SQ4064EY-T1_GE3 Break cena
  • SQ4064EY-T1_GE3 Tehniskie dati

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