- Daļas numurs
- MJD122-1G
- Kategorijas
- Darlington Transistors
- RoHS
- Datu lapas
- Apraksts
- Darlington Transistors BIP IPAK NPN 8A 100V
MJD122-1G
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- Darlington Transistors
- Collector- Base Voltage VCBO
- 100 V
- Collector- Emitter Voltage VCEO Max
- 100 V
- Configuration
- Single
- Continuous Collector Current
- 8 A
- DC Collector/Base Gain hfe Min
- 1000
- DC Current Gain hFE Max
- 12000
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 4 MHz
- Maximum DC Collector Current
- 16 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- SMD/SMT
- Package / Case
- DPAK-3
- Packaging
- Tube
- Pd - Power Dissipation
- 20 W
- Product Type
- Darlington Transistors
- Series
- MJD122
- Transistor Polarity
- NPN
Porduct kategorija
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Jaunākās atsauksmes
goods very well received very good quality
Fabrice Cubaynes
Takes 8 days to Japan. Good!
Alex Fragkos
packed pretty good, all is ok,-seller.
Julianah Yungkim
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
MJD122-1G Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi MJD1
- MJD122-1G Integrēta
- MJD122-1G RoHS
- MJD122-1G PDF datu lapa
- MJD122-1G Datu lapas
- MJD122-1G Daļa. \ T
- MJD122-1G Pirkt
- MJD122-1G Izplatītājs
- MJD122-1G PDF
- MJD122-1G Komponents
- MJD122-1G IC
- MJD122-1G Lejupielādēt PDF failu
- MJD122-1G Lejupielādēt datu lapu
- MJD122-1G Piegāde
- MJD122-1G Piegādātājs
- MJD122-1G Cena
- MJD122-1G Datu lapas
- MJD122-1G Attēls
- MJD122-1G Bilde
- MJD122-1G Inventarizācija
- MJD122-1G Krājumi
- MJD122-1G Oriģināls
- MJD122-1G Lētākais
- MJD122-1G Teicami
- MJD122-1G Bez svina
- MJD122-1G Specifikācija
- MJD122-1G Karstie piedāvājumi
- MJD122-1G Break cena
- MJD122-1G Tehniskie dati
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