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XP162A12A6PR-G

XP162A12A6PR-G
Attēli ir tikai norādei
Daļas numurs
XP162A12A6PR-G
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET Power MOSFET, -20V, 2.5A, P-Type, SOT-89
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
55 ns
Id - Continuous Drain Current
2.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-89-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
300 mOhms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
5 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Quickly came to CET, all in one package. Look at the rules
Perfectly.
High Quality driver, works excellent. It came to Moscow for 7 days.
fast delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Vairāk

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